Semiconductor nanostructures for light emitting diodes
We are investigating the structure of new semiconductor nanostructures based on wide gap semiconducting materials for the application as light emitting diodes and/or high temperature field effect transistors. We use TEM to investigate the structure, defects and composition profile across the interfaces between the different semiconducting materials. We pay particular attention to the formation of any interfacial structures between film and substrate, and between film and contact layer, as these might affect the properties of the nanostructured material. We are investigating, in particular, devices based on 6H-SiC and GaN wide gap semiconductors.
This project is funded by the Army Research Laboratory.